Thermal Vibration and Twist Induced Semiconducting Behaviour in Short DNA Wires
Thermal Vibration and Twist Induced Semiconducting Behaviour in Short DNA Wires作者机构:Department of Physics and Electronic Engineering Changshu Institute of Technology Changshu 215500 National Laboratory of Solid State Microstructures and Department of Physics Nanjing University Nanjing 210093
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2009年第26卷第2期
页 面:290-292页
核心收录:
学科分类:0710[理学-生物学] 071010[理学-生物化学与分子生物学] 081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 080101[工学-一般力学与力学基础] 0801[工学-力学(可授工学、理学学位)]
基 金:Supported by the National Natural Science Foundation of China under Grant Nos 10474031 and 90201039 and the Natural Science Foundation of Jiangsu Educational Department under Grant No 06KJB140001)
主 题:field emission molybdenum dioxide enhancement factor
摘 要:We study the transport properties of electrons in a short homogeneous DNA molecule where thermal vibrations and twist fluctuations of the base molecules are considered. The nonlinear current-voltage curves can be derived by using the equivalent single-particle multichannel network. The voltage gap is sensitive to the strength of thermal vibrations and twist fluctuations of the base molecules. Our results are in good agreement with the recent finding of semiconducting behaviour in short poly(G)-poly(C) DNA oligomers. The present method can also be used to calculate the other molecular wires.