Progress in material removal mechanisms of surface polishing with ultra precision
Progress in material removal mechanisms of surface polishing with ultra precision作者机构:State Key Laboratory of TribologyTsinghua UniversityBeijing 100084China
出 版 物:《Chinese Science Bulletin》 (CHINESE SCIENCE BULLETIN)
年 卷 期:2004年第49卷第16期
页 面:1687-1693页
核心收录:
学科分类:080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术(可授工学、理学学位)]
基 金:National Natural Science Foundation of China,NSFC: 50390060 National Key Research and Development Program of China,NKRDPC: 2003CB716201
主 题:化学机械抛光 CMP 物质迁移机理 磨损 ULSL 计算机硬盘
摘 要:Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in com-puter hard disk and ultra-large scale integration fabrication are reviewed here. The mechanisms underlying the interac-tion between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented.