Characteristics of a 0.1μm SOI Grooved Gate pMOSFET

作     者：邵红旭 孙宝刚 吴峻峰 钟兴华 Shao Hongxu;Sun Baogang;Wu Junfeng;Zhong Xinghua

作者机构：中国科学院微电子研究所北京100029 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2005年第26卷第11期

页      面：2080-2084页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：SOI grooved gate pMOSFET sub-threshold slope 

摘      要：A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 115mV/dec at Vds = -0. 1V and DIBL factor is 70. 7mV/V. The electrical characteristic comparison between the 0.1μm SOI groovedgate pMOSFET and the 0. 1μm bulk grooved gate one with the same process demonstrates that a 0. 1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope.