Photoluminescence of ZnO Nanorods Grown by Hydrothermal Method on Si Substrate
Photoluminescence of ZnO Nanorods Grown by Hydrothermal Method on Si Substrate作者机构:School of Physics and Technology Wuhan University Wuhan China
出 版 物:《Wuhan University Journal of Natural Sciences》 (武汉大学学报(自然科学英文版))
年 卷 期:2009年第14卷第5期
页 面:415-418页
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
基 金:Supported by the National Natural Science Foundation of China (10775106 60676036)
主 题:ZnO nanorods hydrothermal method photoluminescence
摘 要:ZnO nanorods were grown on Si substrate by hydrothermal method under various reaction time (12, 24, and 36 h), Zn^2+ concentrations (0.01, 0.02, and 0.05 mol/L) and reaction temperatures (70-95 ~C). Their photoluminescence (PL) tests were taken at room temperature. Nanorods grown under longer reaction times or higher temperatures can emit stronger UV light and depressed green light, suggesting better crystallization of ZnO nanorods. Higher Zn^2+ concentration results in stronger green band emitting, whereas the UV peak is depressed with the Zn^2+ concentration over 0.02 mol/L. This indicates that excessive interstitial Zn defects may be introduced into the nanorods in Zn-rich environment.