Effects of Conduction Electron Band Structure on Transport of Quantum Dot Systems
作者机构:InstituteforMicroelectronicsPekingUniversityBeijing100871 TechnicalInstituteofPhysicsandChemistryChineseAcademyofSciencesBeijing100080 SchoolofPhysicsPekingUniversityBeijing100871 InstituteofPhysicsandCenterforCondensedMatterPhysicsChineseAcademyofSciencesBeijing100080
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2003年第20卷第5期
页 面:717-720页
核心收录:
学科分类:0810[工学-信息与通信工程] 07[理学] 08[工学] 070201[理学-理论物理] 081001[工学-通信与信息系统] 0702[理学-物理学]
摘 要:We study the effects of the energy band structure of conduction-electron on the transport properties of an interacting quantum dot system. By applying the nonequilibrium Keldysh Green function technique, we show that the finite width of electron band in leads causes the negative differential conductance in some regions of the applied voltage. We also show that the van Hove singularities in the density of states of conduction-electron do not qualitatively change the differential conductance of the system, and hence can be safely ignored. Therefore, the wide band approximation used in the previous investigations is partially justified.