The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters

作     者：马振洋 柴常春 任兴荣 杨银堂 赵颖博 乔丽萍 

作者机构：School of MicroelectronicsKey Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第2期

页      面：534-538页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60776034) 

主　　题：bipolar transistor high power microwave pulse repetition frequency duty cycle 

摘      要：In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current *** result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 *** response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising *** the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are ***,the accumulation temperature decreases with duty cycle increasing for a certain mean power.