Effect of H treatment on performance of HIT solar cells

作     者：REN Bingyan WANG Minhua LIU Xiaoping XU Ying 

作者机构：School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China Beijing Solar Energy Research Institute Beijing 100083 China School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2006年第25卷第z1期

页      面：133-136页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This project was financially supported by the Natural Science Foundation of Hebei Province  China (No.F2005000073) 

主　　题：H pretreatment HIT solar cell c-si buffer layer 

摘      要：Hydrogen is a ubiquitous element in semiconductor processing and particularly in amorphous and microcrystalline silicon where it plays a crucial role in the growth processes as well as in the material properties. Because of its low mass it can easily diffuse through the silicon network and leads to the passivation of dangling bonds but it may also play a role in the stabilization of metastable defects. Thus a lot of work has been devoted to the study of hydrogen diffusion, bonding and structure in disordered semiconductors. The sequence, deposition-exposure to H plasma-deposition was used to fabricate the microcrystalline emitter. A proper atomic H pretreatment of c-Si surface before depositions i layer was expected to clean the surface and passivatates the surface states, as a result improing the device parameters. In this study, H2 pretreatment of c-si surface was used at different time, power and temperature. It is found that a proper H pretreatment improves passivation of c-si surface and improves the device parameters by AFM and testing I-V.