RBS Analysis of N-profile in N-doped Diamond after High Energy Heavy Ion Irradiations

作     者：Wang Zhiguang, Zhang Chonghong, Zhao Zhiming, Liu Jie and Jin Yunfan 

出 版 物：《近代物理研究所和兰州重离子加速器实验室年报：英文版》 (IMP & HIRFL Annual Report)

年 卷 期：2002年第1期

页      面：51-51页

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Supported by NSFC and the Chinese Academy of Sciences 

主　　题：高能重离子辐照 掺氮金刚石 氮剖面 RBS分析 重离子核物理 低能离子植入技术 化学气相沉积技术 

摘      要：We have proposed a novel technique, low energy ion implantation + swift heavy ion irradiation , for synthesizing new structures in atom mixed materials. Recently, we used this technique to synthesize carbon-nitrides such as a and β-C3N4. As we know, the ratio of nitrogen (N-) to carbon (C-) atoms is one of the key parameters for synthesizing the phase a or β-C3N4. The ideal ratio of N- to C-atoms, N/C, is 4/3. However, this value could not be easily achieved on account of the solubility, diffusion and release of the nitrogen atoms