Hole mobility of strained Si/(001)Si_(1-x)Ge_x

作     者：WANG XiaoYan ZHANG HeMing MA JianLi WANG GuanYu QU JiangTao 

作者机构：Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi＇an 710071 China Department of Electron and Electricity Engineering Baoji University of Arts and Sciences Baoji 721007 China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2012年第55卷第1期

页      面：48-54页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Ministries and Commissions (Grant Nos. 51308040203  9140A08060407DZ0103 and 6139801) 

主　　题：subband hole occupancy scattering model germanium content hole mobility 

摘      要：The hole mobility of strained silicon along the orientation on (001) Si1?xGex is obtained by solving collision term in the Boltzmann transport equation. The analytical model is proposed that considers the effect of strain-induced splitting at valence band valleys in silicon, doping dependence and three scattering mechanisms, i.e., ionized impurity scattering, acoustic phonon scattering and non-polar optical phonon scattering. The hole occupancy at top band indicates a non-monotonic variation under biaxial tensile strain at low temperature (77 K). What s more, a non-monotonic variation of hole mobility at room temperature (300 K) is presented. Compared with the room temperature hole mobility, the low temperature hole mobility is affected greatly by ionized impurity scattering at lower impurity concentration. At the same time, the room temperature hole mobility is lower than that of electron with the same germanium content and doping concentration. If the parameters are correctly chosen, the model can also be used to calculate the hole mobility of other crystal faces with arbitrary orientation. So, it lays a useful foundation for strained silicon devices and circuits.