A novel compensation method for polygonized mesa structures on(100) silicon substrate

作     者：张涵 李伟华 

作者机构：Key Laboratory of MEMS of the Ministry of Education Southeast University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第6期

页      面：16-21页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：(100) substrate compensation method polygonized mesa structure simulation result experimental result 

摘      要：A theoretical compensation method for polygonized mesa structures on（100） silicon substrate during the anisotropic etching process has been developed,which contains four stages as follows：prepare the information of the etching condition;predict the structure＇s undercutting profile;construct the topological structure of compensation patterns; and generate practical compensation patterns from the topological *** reasoning process is clearly stated,and detailed steps for the undercutting prediction and topological structure construction are *** are also drawn about the rules which must be obeyed during the pattern generation *** simulation and experimental results of some polygon structures are finally given to prove this method＇s validity and reliability.