The effect of multi-intermediate bands on the behavior of an InAs_(1-x)N_x/GaAs(1-y)Sb_y quantum dot solar cell

作     者：Abou El-Maaty M.Aly A.Nasr 

作者机构：Power Electronics and Energy Conversion DepartmentERINRCB College of ComputerQassim University Radiation Engineering DepartmentNCRRTAtomic Energy Authority 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第4期

页      面：1-6页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：intermediate bands solar cells quantum dots efficiency solar concentration 

摘      要：A mathematical model of quantum dot intermediate band solar cells （QDIBSCs） is investigated using two intermediate bands （IBs）. These two IBs arise from the quantum dot （QD） semiconductor material within the bandgap energy. Some parameters such as the width of the QD （WQD） and the barrier thickness or the inter-dot distances between the QDs （BT） are studied to show their influence on the performance of the QDIBSC. The timeindependent Schr6dinger equation, which is solved using the Kronig-Penney model, is used to determine the posi- tion and bandwidth energies of the two IBs. In our proposed model, the cubic shape of the QDs from InAs0.9N0.1 and the barrier or host semiconductor material from GaAs0.98Sb0.02 are utilized. It is shown from the results obtained that changing the parameters WQD and Bx has more influence on the bandwidth energy for the first IB, A 1, than in the case of the second IB, A2. The optimum power conversion efficiencies （PCEs） of the QDIBSCs with two IBs for the model under study are 58.01% and 73.55% at 1 sun and maximum solar concentration, respectively. One can observe that, in the case of the two IBs, an improvement of the PCE is achieved.