Design and Optimization of a GaN GIT Based PFC Boost Converter

作     者：Wenbo Wang Frans Pansier Jelena Popovic J.A.Ferreira 

作者机构：Delft University of TechnologyDelftThe Netherlands 

出 版 物：《Chinese Journal of Electrical Engineering》 (中国电气工程学报（英文）)

年 卷 期：2017年第3卷第3期

页      面：34-43页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0802[工学-机械工程] 0811[工学-控制科学与工程] 

主　　题：GaN GIT boost converter PFC high frequency design optimization 

摘      要：The advent of GaN power devices brings the possibility of pushing up frequencies of power electronics system beyond the capacity of conventional Si *** harvest the high frequency operation benefits of GaN technology,not only GaN devices should be used optimally by providing proper switching and conduction conditions to best accommodate parasitic elements inherent with the devices,other components should also be capable of facilitating high frequency *** this paper,PFC boost converter is used as a platform to harvest the benefits of GaN technology and,at the same time,to uncover the limitations in pushing power electronics systems up.A 600W PFC boost converter with a maximum switching frequency of 3MHz is designed and implemented,which reached an average efficiency of 98.5%.The results indicate that,when properly used,a GaN PFC boost converter could operate at a frequency that is beyond the reach of conventional Si *** well,with availability of GaN devices,high frequency operation of power electronics systems is no longer limited by the lack of switching devices but by practical issues *** frequency magnetic materials,high frequency controllers,etc.