Topological to trivial insulating phase transition in stanene

作     者：Michel Houssa Bas van den Broek Konstantina Iordanidou Anh Khoa Augustin Lu Geoffrey Pourtois Jean-Pierre Locquet Valery Afanas'ev Andre Stesmans 

作者机构：Department of Physics and Astronomy University of Leuven Celestijnenlaan 200D B-3001 Leuven Belgium imec 75 Kapeldreef B-3001 Leuven Belgium 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2016年第9卷第3期

页      面：774-778页

核心收录：

学科分类：0808[工学-电气工程] 080803[工学-高电压与绝缘技术] 08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the KU Leuven Research Funds 

主　　题：two-dimensional (2D)materials topological insulators density functional theory(DFT) simulations electronic structure 

摘      要：Electronic properties of stanene, the Sn counterpart of graphene are theoretically studied using first-principles simulations. The topological to trivial insulating phase transition induced by an out-of-plane electric field or by quantum confinement effects is predicted. The results highlight the potential to use stanene nanoribbons in gate-voltage controlled dissipationless spin-based devices and are used to set the minimal nanoribbon width for such devices, which is typically approximately 5 nm.