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Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

作     者:YANG AiLing YANG Yun ZHANG ZhenZhen BAO XiChang YANG RenQiang LI ShunPin SUN Liang 

作者机构:Department of PhysicsOcean University of China Qingdao Institute of Bioenergy & Bioprocess TechnologyChinese Academy of Sciences 

出 版 物:《Science China(Technological Sciences)》 (中国科学(技术科学英文版))

年 卷 期:2013年第56卷第1期

页      面:25-31页

核心收录:

学科分类:0810[工学-信息与通信工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 0812[工学-计算机科学与技术(可授工学、理学学位)] 

基  金:supported by the National Natural Science Foundation of China (Grant Nos. 41172110,61107090) Shandong Provincial Natural Science Foundation (Grant No. ZR2011BZ007) 

主  题:nano-ZnO thin films low temperature annealing PL spectra defects 

摘      要:Nano-ZnO thin films composed of nanoparticles with sizes of 10-16 nm on silicon substrates at low temperature were prepared by sol-gel *** placing the nano-ZnO thin films at room temperature or annealing at 100°C in air for 10 h intermittently,within a total 70 h annealing time,the evolution of PL spectra of the nano-ZnO thin films were studied in *** the annealing time increases,the PL peaks shift from violet to blue and green *** PL peaks at violet and blue bands decrease with the annealing time,but the PL peaks at green band are *** PL spectra are related to the defects in the nano-ZnO thin *** PL peaks positioned at 430 nm are mainly related to defects of zinc interstatials(Zni),oxygen vacancies and(Vo);the ones at 420 nm to oxygen interstitials(Oi),Zinc vacancies(Vzn),Zni ;and the ones at 468 nm to Vzn,Zni,and charged oxygen interstatials(Vo+).The green luminescence is related to Oi,Vo and *** evolutions of PL spectra and the defects are also related to the concentrations of Zn in the thin films,the thicknesses of the films and the annealing *** the films with 0.5 M and 1.0 M Zn concentrations,after 20 h and 30 h annealing in air at 100°C,respectively,either placing them in air at room temperature or continuing anneal in air at 100°C,the PL spectra are *** the low temperature annealing,Zni decreases with the annealing time,and Oi *** Oi favors to keep the nano-ZnO thin films *** result is important to nano-ZnO thin films as electron transport layers in inverted or tandem organic solar cells.

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