Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC

作     者：韩茹 杨银堂 王平 崔占东 李亮 Han Ru;Yang Yintang;Wang Ping;Cui Zhandong;Li Liang

作者机构：西安电子科技大学宽禁带半导体材料与器件教育部重点实验室西安710071 中国电子科技集团公司第13研究所石家庄050051 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2007年第28卷第2期

页      面：149-153页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：教育部重点科技项目(批准号:02074) 国家部委预研计划(批准号:41308060105)资助项目~~ 

主　　题：silicon carbide ohmic contact carbon vacancy interface band structure 

摘      要：An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported. Specific contact resistance as low as 2. 765 x 10^-6Ω·cm^2 was achieved after rapid thermal annealing in N2 for 2min at 950℃. SIMS analysis shows that the formation of Ni silicide after annealing supported a number of carbon atoms＇ outdiffusion from the SiC to form interstitial compound TiC. This process can create abundant C vacancies near the interface. It is the carbon defect layer that enhances the defect-assisted tunneling. The interface band structure within the defect level could make it clear why the metal-SiC contacts become ohmic during annealing.