Characterization of ZnO nanowire field-effect transistors exposed to ultraviolet radiation

作     者：黎明 张海英 郭常新 徐静波 付晓君 陈普锋 

作者机构：Institute of MicroelectronicsChinese Academy of Sciences Department of PhysicUniversity of Science and Technology of China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2009年第18卷第11期

页      面：5020-5023页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0821[工学-纺织科学与工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 082101[工学-纺织工程] 

基　　金：Project supported by the Dean Fund of Institute of Microelectronics  Chinese Academy of Sciences (Grant No 08SB034002) 

主　　题：ZnO nanowire suspended field-effect transistor ultraviolet radiation 

摘      要：A ZnO nanowire （NW） field-effect transistor （FET） is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5 min, the radiation intensity increases to 5.1μW/cm^2, while the saturation drain current （Idss） of the nanowire FET decreases sharply from 560 to 320 nA. The field effect mobility（μ） of the ZnO nanowire FET drops from 50.17 to 23.82cm^2/（V·s） at VDS= 2.5V, and the channel resistivity of the FET increases by a factor of 2.0n the other hand, when the radiation intensity is 2.5μW/cm^2, the DC performance of the FET does not change significantly with irradiation time （its performances at irradiation times of 5 and 20 min are almost the same）; in particular, the Idss of NW FET only reduces by about 50 nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device