Optical Constants of SiO2 Films Deposited on Si Substrates
Optical Constants of SiO2 Films Deposited on Si Substrates作者机构：Ti_anjin Key Laboratory of Optical Thin Film Tianjin Jinhang Instittzte of Technical Physics Tianjin 300192 National Key Laboratory of Science and Technology on Tunable Laser Institute of Optical-Electronics Harbin Institute of Technology Harbin 150080
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2014年第31卷第4期
页 面：114-117页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Supported by the National Natural Science Foundation of China under Grant No 61235011 Tianjin Municipal Government of China (Nos 13JCYBJC17300 and 12JCQNJC01200) and the National Key Scientific Instrument and Equipment Development Project of China (No 2012YQ040164)
主 题：SILICA films ULTRAVIOLET-visible spectroscopy ELLIPSOMETRY DIELECTRIC function TRANSMITTANCE (Physics) REFLECTANCE
摘 要：SiO2 films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO2 films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is oStained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared （UV-VIS-IR） range. In the UV-VIS-NIR spectral range, refractive indices of SiO2 films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO2films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO2 films in the wavelength region from 0.19μm to 25 #m is of great importance for the design of high quality coatings, such as ultra-low loss coating.
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