Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

作     者：Wenhua SHI Lei ZHAO Liping LUO Qiming WANG 

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2007年第23卷第3期

页      面：301-303页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金："863" Research Plan Grant No. 2006AA032415 the National Natural Science Foundation of China under Grant Nos. 60336010, 90104003, 90401001,60676005 the National High Technology Research and Development Program of China No. 2002AA312010 

主　　题：X-ray diffraction GeSi Nano-dots Annealing Island 

摘      要：The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction （DCXRD） pattern. It is found that the width of the 0^th peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge （GeSi actually） layer, which make the width of the 0^th peak narrow after annealing.