Effect of Fabrication Process Parameters on Microstructure Evolution and Spectral Characteristics of Silicon Carbide Quantum Dots

作     者：SONG Yuepeng KANG Jie ZHU Yanmin GAO Dongsheng GUO Jing KIM Hyoungseop 

作者机构：Mechanical and Electronic Engineering CollegeShandong Agricultural University Shandong Province Key Laboratory of Horticultural Machineries and EquipmentsShandong Agricultural University College of Horticulture Science and EngineeringShandong Agricultural University Department of Materials Science and EngineeringPohang University of Science and Technology 

出 版 物：《Journal of the Chinese Ceramic Society》 (硅酸盐学报(英文版))

年 卷 期：2014年第2期

页      面：93-98页

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070302[理学-分析化学] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：supported by a grant from the Fundamental R&D Program for Core Technology of Materials(10037206) the Ministry of Knowledge Economy,Korea the Postdoctoral Innovative program(201203101,2013M531636) Shandong Technology development project(2014GGX102012) Program of Agricultural Data Industry Technology Innovation Strategic Alliance(75007) Key Laboratory of Functional Crystals and Laser Technology,TIPC,CAS 

主　　题：chemical etching silicon carbide quantum dots microstructure evolution etching components sonification 

摘      要：Silicon carbide（SiC） quantum dots（QDs） in aqueous suspension were produced via corrosion in a mixture of chemical etchants（i.e.,HNO;and HF）,ultrasonic dispersion and *** microstructural evolution of rawβ-SiC particles during the etching process was *** porous structure of the β-SiC raw particles obtained due to the hydrofluoric-acid-induced dissociation of Si—O bonding and oxidation by nitric acid was *** hollow and grid-like structures formed in the corrosion process were broken due to the cavitation and crushing of ultrasonic treatment,forming *** homogeneous SiC-QDs in aqueous suspension were obtained in a *** of preparation parameters on the spectral characteristics of the SiC-QDs was *** results show that the maximum photo-luminescence（PL） intensity of the SiC-QDs can be obtained at excitation wavelengths of 340 *** PL intensity and emission wavelength are affected by the volume ratio of the mixture of chemical etchants and the duration of ultrasonic ***,the color of the fluorescence is related to the size of the SiC-QDs.