A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology

作     者：Chia-Han Lin Hsien-Chin Chiu Min-Li Chou Hsiang-Chun Wang Ming-Feng Huang Chia-Han Lin;Hsien-Chin Chiu;Min-Li Chou;Hsiang-Chun Wang;Ming-Feng Huang

作者机构：Department of Electronic Engineering Chang Gung University No. 259 Wenhua 1st Rd. Guishan Dist. Taoyuan City 33302 Taiwan JMIC 16F. No.44 Sec. 2 Zhongshan N. Rd. Zhongshan Dist. Taipei City 104 Taiwan 

出 版 物：《Journal of Computer and Communications》 (电脑和通信（英文）)

年 卷 期：2016年第4卷第3期

页      面：74-78页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：GaN High Power Class-F 

摘      要：This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.