Nano-Coating Process for Si [1 0 0] Wafer Using Atmospheric Pressure Plasma Jet (APPJ)

作     者：Ahmed Rida Galaly 

作者机构：Physics Department Faculty of Science Beni-Suef University Beni- Suef Egypt 

出 版 物：《Journal of Modern Physics》 (现代物理（英文）)

年 卷 期：2012年第3卷第9期

页      面：1031-1039页

学科分类：07[理学] 070204[理学-等离子体物理] 0702[理学-物理学] 

主　　题：Nano-Coating Nonthermal Atmospheric Pressure Plasma Jet Si [1 0 0] OMCTS 

摘      要：Three-electrode plasma jet system consisting of a perforated dielectric tube with two outer and one floating inner electrodes was developed and employed for nano-coating processes of Si [1 0 0] wafer. Lowered gas breakdown voltage, increasing plasma density and increased discharge current were achieved by using the floating inner electrode. The low temperature (Nonthermal) Atmospheric Pressure Plasma protective coating technique using precursor-containing gases (Ar, O2 and OMCTS mixture) which injected into Plasma Jet (APPJ), there are several techniques are introduced here to avoid substrate damage including increasing plasma density without increasing the kinetic energy of the ion bombardment. Furthermore some few precautions are given here to insure good media for silicon wafer prepared for coating.