The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor
The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor作者机构：Department of Electronics Faculty of Science and Technology Khenchela University Khenchela Algeria MoDERNa Laboratory University of Constantine 1 Constantine Algeria MoDERNa Laboratory University of Constantine 1 Constantine Algeria
出 版 物：《Journal of Sensor Technology》 (传感技术（英文）)
年 卷 期：2014年第4卷第2期
页 面：59-65页
学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学]
主 题：Thermal Drift Pressure Piezoresistivity Piezoresistive Coefficients Sensor
摘 要：Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and for p-type silicon as functions of impurity concentration for different temperatures. This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.
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