MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo
MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo作者机构：不详
出 版 物：《Journal of Modern Physics》 (现代物理（英文）)
年 卷 期：2011年第2卷第5期
页 面：341-349页
主 题：Molybdenum Sulphide Precursor Metal Organic Chemical Vapour Deposition (MOCVD) Thin Film Characterization
摘 要：A single solid source precursor bis-(morpholinodithioato-s,s’)-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420?C. The film was characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Mi-croscopy (SEM), X-ray Diffractometry (XRD) and Atomic Force Microscopy (AFM). A direct optical band gap of 1.77 eV was obtained from the analysis of the absorption spectrum. The sheet resistance was found to be of the order of 10P–5P ΩP–1P?cmP–1P. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that is less than 2 μm while XRD indicates parallel orientation of the basal plane to the substrate surface.
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