Fabrication of Perovskite-Type Photovoltaic Devices with Polysilane Hole Transport Layers
Fabrication of Perovskite-Type Photovoltaic Devices with Polysilane Hole Transport Layers作者机构：Department of Materials Science the University of Shiga Prefecture Shiga Japan Frontier Materials Laboratories Osaka Gas Chemicals Co. Ltd. Osaka Japan
出 版 物：《Materials Sciences and Applications》 (材料科学与应用期刊（英文）)
年 卷 期：2017年第8卷第2期
页 面：209-222页
主 题：Polysilane Hole Transport Layer Perovskite Photovoltaic Device
摘 要：Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were used as the hole transport layers. First, structural and optical properties of the PMPS and DPPS films were investigated, and the as-prepared PMPS and DPPS films were amorphous. Optical absorption spectra of the amorphous PMPS and DPPS showed some marked features due to the nature of polysilanes. Then, microstructures, optical and photovoltaic properties of the perovskite-type photovoltaic devices with polysilane hole transport layers were investigated. Current density-voltage characteristics and incident photon to current conversion efficiency of the photovoltaic devices with the polysilane layers showed different photovoltaic performance each other, attributed to molecular structures of the polysilanes and Si content in the present hole transport layers.
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