Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

作     者：Neslihan Ayarci Kuruoglu Orhan Ozdemir Kutsal Bozkurt 

作者机构：Department of PhysicsFaculty of Science and LettersYildiz Technical UniversityIstanbulTurkey 

出 版 物：《Journal of Materials Science and Chemical Engineering》 (材料科学与化学工程（英文）)

年 卷 期：2017年第5卷第9期

页      面：1-9页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Long Wavelength Laser Diode Quantum Dots Quantum Dashes Electroluminescence Temperature Dependent Currentdensity-Voltage Characteristics 

摘      要：Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 μm and 1.3 μm, respectively.