Synthesis of Hexagonal Boron Carbonitride without Nitrogen Void Defects
Synthesis of Hexagonal Boron Carbonitride without Nitrogen Void Defects作者机构：Department of Chemistry University of Rajshahi Rajshahi Bangladesh Synchrotron Radiation Research Unit Quantum Beam Science Directorate Japan Atomic Energy Agency Ibaraki-ken Japan Sector of Fukushima Research and Development Japan Atomic Energy Agency Fukushima-shi Japan Department of Chemistry and Applied Chemistry Saga University Honjyo Japan
出 版 物：《Materials Sciences and Applications》 (材料科学与应用期刊（英文）)
年 卷 期：2015年第6卷第5期
页 面：353-359页
主 题：h-BCN Defect Chemical Vapor Deposition XPS NEXAFS
摘 要：The synthesis and structure of hexagonal boron carbonitride (h-BCN) film on polycrystalline diamond surface were reported. Polycrystalline diamond and/or diamond-like carbon were first fabricated on Si (100) and then diamond like carbon was used as substrate. The deposition was performed by radio frequency plasma enhanced chemical vapor deposition. In order to reduce the content of nitrogen void defects, the deposition was performed at the high temperature of 950°C under the working pressure of 2.6 Pa. The typical sample with atomic composition of B31 C37 N26 O6 in the h-BCN lattice was characterized by X-ray photoelectron spectroscopy. The fine structure of the film was studied by near-edge X-ray absorption fine structure (NEXAFS) measurements. The B K-edge and N K-edge of NEXAFS spectra revealed that the synthesized h-BCN film had the ideal honeycomb- like BN3 configuration without nitrogen void defects.
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