Preparation of Light-Emitting Ytterbium-Doped Tantalum-Oxide Thin Films Using a Simple Co-Sputtering Method
Preparation of Light-Emitting Ytterbium-Doped Tantalum-Oxide Thin Films Using a Simple Co-Sputtering Method作者机构：Graduate School of Science and Technology Gunma University Kiryu Japan
出 版 物：《Materials Sciences and Applications》 (材料科学与应用期刊（英文）)
年 卷 期：2015年第6卷第2期
页 面：209-213页
学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学]
主 题：Tantalum Oxide Ytterbium Co-Sputtering Annealing Photoluminescence
摘 要：Light-emitting ytterbium-doped tantalum-oxide thin films were prepared using a simple co-sputtering method for the first time. Sharp photoluminescence peaks having a wavelength of around 980 nm were observed from films annealed from 700°C to 1000°C for 10 to 40 min. The strongest intensity of the 980-nm peak was obtained from a film deposited using three ytterbium-oxide pellets and annealed at 800°C for 20 min. Such rare-earth doped tantalum-oxide sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as both anti-reflection and down-conversion layers for realizing high-efficiency silicon solar cells.
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