ZnO Films Deposited on Porous Silicon by DC Sputtering

作     者：Masato Ohmukai Takuya Nakagawa Ayumu Matsumoto 

作者机构：Department of Electrical and Computer Engineering Akashi College of Technology Akashi Japan Technical Education Support Center Akashi College of Technology Akashi Japan Collaborative Laboratories for Advanced Decommissioning Science Japan Atomic Energy Agency Ibaraki Japan 

出 版 物：《Journal of Materials Science and Chemical Engineering》 (材料科学与化学工程（英文）)

年 卷 期：2017年第5卷第6期

页      面：12-20页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：ZnO Film DC Sputtering Annealing X-Ray Diffraction Analysis Porous Silicon 

摘      要：ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.