Ferroelectricity in Layered Perovskites as a Model of Ultra-Thin Films
Ferroelectricity in Layered Perovskites as a Model of Ultra-Thin Films作者机构:Department of Physics Hokkaido University Sapporo Japan
出 版 物:《World Journal of Condensed Matter Physics》 (凝固态物理国际期刊(英文))
年 卷 期:2016年第6卷第3期
页 面:224-243页
学科分类:07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
主 题:Ferroelectricity Layered Oxide Perovskite Thin Film Size Effect
摘 要:The instability of thin ferroelectric films is discussed based on the close similarity of dielectric properties between bulk Bi-layered perovskites and thin BaTiO3 films. The dielectric properties of pseudo-two-dimensional layered perovskites suggest that the bulk layered ferroelectric is a good model of ultra-thin ferroelectric film with a few perovskite units, free from any misfit lattice strain. It seems plausible that the ferroelectric interaction is still prominent but shows a crossover from ferroelectric to antiferroelectric along the unique c-axis (perpendicular to the film plane);with decreasing thickness, the ferroelectricity appears within the plane, which results in so-called “canted ferroelectricity. An extra relaxation mode induced by surface effect of thin films correlates with soft mode, which results in a new intermediate phase between the paraelectric and ferroelectric phases. These evidences may indicate no critical thickness even for ferroelectric ultra- thin films.