A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

作     者：S.S.Dhasade S.H.Han V.J.Fulari 

作者机构：Holography and Material Research LaboratatoryDepartment of PhysicsShivaji UniversityKolhapur 416004India Department of ChemistryHanyang UniversitySouth Korea 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第9期

页      面：22-27页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：electrodeposition copper telluride quantum dots chemical composition optical properties 

摘      要：Copper telluride onion flower like microstructures, constructed by quantum dots with various diameters, were obtained by a potentiostatic electrodeposition method at room temperature. The structural, optical, surface morphology, compositional analysis and Raman spectra properties of the deposited films have been studied using X-ray diffraction, optical absorption with scanning electron microscopy, EDAX, and Raman spectroscopy, The electrolyte concentration and deposition time can be used to control the diameter of the electrodeposited quantum dots to within a range of 50-55 nm. The films are found to be stoichiometric in composition. The optical constants such as the optical band gap energy and the optical absorption spectra show significant variation in their values with a change in deposition time. Upon deposition time the band gap energy increased from a value of 2.74 to 2.89 eV.