Raman Spectroscopy Mapping of Plasma Thermally Sprayed Silicon Sheet for Solar Cell Substrate
Raman Spectroscopy Mapping of Plasma Thermally Sprayed Silicon Sheet for Solar Cell Substrate作者机构：Technological Center Foundation of Minas Gerais Brazil Material Engineering Thematic Web Brazil University of the State of Minas Gerais Brazil Federal Technological Education Center Brazil Federal University of Espirito Santo Brazil
出 版 物：《材料科学与工程（中英文版）》 (Journal of Materials Science and Engineering)
年 卷 期：2011年第5卷第5期
页 面：561-569页
学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070302[理学-分析化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学]
主 题：薄膜太阳能电池 基板温度 等离子热喷涂 硅钢片 拉曼光谱 映射 薄膜外延生长 半导体薄膜
摘 要：High purity semiconductor films commit 50% of crystalline photovoltaic cell cost and current efforts focus on photovoltaic alternative devices, known as wafer equivalents, based on reduction of substrate and active light absorbing layer thickness and use of foreign substrates instead of traditional silicon wafers. In this way, knowing the substrate crystalline fraction, roughness and grain size distribution is relevant for thin film epitaxial growth. This work presents a semi-quantitative crystalline fraction analysis measured by Raman mapping microscopy of pc-Si sheets prepared by Atmospheric Thermal Plasma Spray (ATPS) as initial reference for solar cell substrates. Results showed a structural mixed silicon sheet with different values of crystalline fraction, specific regions of amorphous structure contribution, transition regions and a range of crystallite size. The results suggests the need for better ATPS substrate temperature control for higher and homogeneous crystalline fraction values to attend to requirements of a thin film solar cell substrate.
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