Planar Channelling Criticalities of MeV Protons in Si Crystal： Simulations, Evaluation and Applications

作     者：Mukhtar Ahmed Rana 

作者机构：Methodology Applications Initiative Physics Division PINSTECH Post Office Nilore Islamabad Pakistan 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2008年第25卷第10期

页      面：3724-3727页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Higher Education Commission of Pakistan for research visit to University of Manchester under Post Doctoral Fellowship Programme 2007-08 

主　　题：the power-law exponents precipitation durative abrupt precipitation change 

摘      要：We reports a phase-space structure of MeV proton beam planar channelled along {110} planes in Si crystal using simulation results with the help of a computer code FLUX. The aim is to understand channelling conditions suitable for disorder measurement in crystals. Phase-space distribution of a planar channelled proton beam evolutes in a systematic fashion when it travels into the crystal. Planar channelled beam oscillates between phase-like and space-like conditions in which a part of the beam becomes under phase and space criticalities. These criticality conditions in planar channelling are analysed, explained and discussed with the perspective of defect measurement in crystals.