High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

作     者：谢圣文 张宇 杨成奥 黄书山 袁野 张一 尚金铭 邵福会 徐应强 倪海桥 牛智川 Sheng-Wen Xie;Yu Zhang;Cheng-Ao Yang;Shu-Shan Huang;Ye Yuan;Yi Zhang;Jin-Ming Shang;Fu-Hui Shao;Ying-Qiang Xu;Hai-Qiao Ni;Zhi-Chuan Niu

作者机构：State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第1期

页      面：411-414页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61790580 and 61435012) the National Basic Research Program of China(Grant No.2014CB643903) the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032) 

主　　题：mid-infrared laser diode digital alloys characteristic temperature bars 

摘      要：InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).