Bulk gallium oxide single crystal growth

作     者：Xutang Tao 

作者机构：State Key Laboratory of Crystal Materials & Key Laboratory of Functional Crystal Materials and Device Shandong University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2019年第40卷第1期

页      面：3-4页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：Gallium oxide ultra-wide bandgap semiconductor crystal growth 

摘      要：Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit (FOM), shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.