The influence of interface modifier on photodetachment of negative ions in an electric field near a metal surface

作     者：黄凯云 王德华 

作者机构：School of PhysicsLudong University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第7期

页      面：133-141页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.11074104 and 10604045) the University Science & Technology Planning Program of Shandong Province of China (Grant No.J09LA02) the Discipline Construction Fund of Ludong University of China 

主　　题：photodetachment interface closed orbit theory 

摘      要：Based on closed-orbit theory, the influence of an interface modifier on the photodetachment of H^- in an electric field near a metal surface is studied. It is demonstrated that the interface strengthens the oscillations in the photodetachment cross section. However, when the electric field environments are different, the strengthening oscillations are caused by different sources. When the electric field direction is upward, the interface enhances the oscillations by shortening the period and the action of the closed orbit. When the electric field direction is downward, the interface strengthens the oscillations either by extending the coherent energy range or by increasing the total number of the closed orbits. We hope that our results will be conducive to the understanding of the photodetachment process of negative ions near interfaces, cavities and ion traps.