Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering

作     者：Ravindra Waykar Amit Pawbake Rupali Kulkarni Ashok Jadhavar Adinath Funde Vaishali Waman Rupesh Dewan Habib Pathan Sandesh Jadkar 

作者机构：School of Energy StudiesSavitribai Phule Pune UniversityPune 411007India Modern College of ArtsScience and CommerceShivajinagarPune 411 005India Department of PhysicsSavitribai Phule Pune UniversityPune 411 007India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2016年第37卷第4期

页      面：24-31页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：the Department of Science and Technology(DST)and the Ministry of New and Renewable Energy(MNRE),Government of India for the financial support the University Grants Commission,New Delhi for special financial support under the UPE program 

主　　题：ZnO thin film substrate temperature optical properties 

摘      要：Transparent and conducting Al-doped ZnO（ZnO：Al） films were prepared on glass substrate using the RF sputtering method at different substrate temperatures from room temperature（RT） to 200 ℃. The structural,morphological, electrical and optical properties of these films were investigated using a variety of characterization techniques such as low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy（XPS）, field-emission scanning electron microscopy（FE-SEM）, Hall measurement and UV–visible spectroscopy. The electrical properties showed that films deposited at RT have the lowest resistivity and it increases with an increase in the substrate temperature whereas carrier mobility and concentration decrease with an increase in substrate temperature. Low angle XRD and Raman spectroscopy analysis reavealed that films are highly crystalline with a hexagonal wurtzite structure and a preferred orientation along the c-axis. The FE-SEM analysis showed that the surface morphology of films is strongly dependent on the substrate temperature. The band gap decreases from 3.36 to 3.29 e V as the substrate temperature is increased from RT to 200 ℃. The fundamental absorption edge in the UV region shifts towards a longer wavelength with an increase in substrate temperature and be attributed to the Burstein-Moss shift. The synthesized films showed an average transmission（〉 85%） in the visible region, which signifies that synthesized ZnO：Al films can be suitable for display devices and solar cells as transparent electrodes.