Synthesis and Ex Situ Doping of ZnTe and ZnSe Nanostructures with Extreme Aspect Ratios

作     者：Joanne W.L.Yim Deirdre Chen Gregory F.Brown Junqiao Wu 

作者机构：Department of Materials Science and EngineeringUniversity of CaliforniaBerkeleyCA 94720USA Materials Sciences DivisionLawrence Berkeley National LaboratoryBerkeleyCA 94720USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2009年第2卷第12期

页      面：931-937页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the National Science Foundation(No.EEC-0832819) the characterization portion by the Laboratory Directed Research and Development Program of Lawrence Berkeley National Laboratory under the Department of Energy(No.DE-AC02-05CH11231) J.Y.acknowledges support from the National Science Foundation Graduate Research Fellowship Program.Portions of this work were performed at the Molecular Foundry,LBNL,and the U.C.Berkeley Microfabrication Laboratory 

主　　题：Aspect ratio doping nanowires zinc selenide zinc telluride 

摘      要：We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor *** tuning the local conditions at the growth substrate,high aspect ratio nanostructures can be synthesized.A Cu-ion immersion doping method was applied,producing strongly p-type conduction in ZnTe and ionic conduction in *** extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.