Synthesis and Device Applications of High-Density Aligned Carbon Nanotubes Using Low-Pressure Chemical Vapor Deposition and Stacked Multiple Transfer

作     者：Chuan Wang Koungmin Ryu Lewis Gomez De Arco Alexander Badmaev Jialu Zhang Xue Lin Yuchi Che Chongwu Zhou 

作者机构：Ming Hsieh Department of Electrical EngineeringUniversity of Southern CaliforniaLos AngelesCalifornia 90089USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2010年第3卷第12期

页      面：831-842页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the Focus Center Research Program(FCRP)-Center on Func-tional Engineered Nano Architectonics(FENA) Joint King Abdulaziz City for Science and Technology(KACST)/California Center of Excellence on Nano Science and Engineering for Green and Clean Tech-nologies the National Science Foundation(Nos.CCF-0726815 and CCF-0702204) 

主　　题：Aligned carbon nanotubes chemical vapor deposition high-density high performance transistors 

摘      要：For nanotube-based electronics to become a viable alternative to silicon technology,high-density aligned carbon nanotubes are *** this paper,we report the combined use of low-pressure chemical vapor deposition and stacked multiple transfer to achieve high-density aligned *** using an optimized nanotube synthesis recipe,we have achieved high-density aligned carbon nanotubes with density as high as 30 tubes/μ*** addition,a facile stacked multiple transfer technique has been developed to further increase the nanotube density to 55 tubes/μ***,high-performance submicron carbon nanotube field-effect transistors have been fabricated on the high-density aligned *** removing the metallic nanotubes by electrical breakdown,the devices exhibit on-current density of 92.4μA/μm and normalized transconductance of 13.3μS/μ***,benchmarking with the aligned carbon nanotube transistors in the literature indicates that our devices exhibit the best performance so far,which is attributed to both the increased nanotube density and scaling down of channel *** study shows the great potential of using such high-density aligned nanotubes for high performance nanoelectronics and analog/RF applications.