Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

作     者：Tyler A Growden Weidong Zhang Elliott R Brown David F Storm David J Meyer Paul R Berger 

作者机构：Department of Electrical and Computer EngineeringThe Ohio State UniversityColumbusOhio 43210USA Departments of Physics and Electrical EngineeringWright State UniversityDaytonOhio 45435USA US Naval Research LaboratoryWashingtonDC 20375USA 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2017年第6卷第1期

页      面：168-174页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：funding from the Office of Naval Research under the‘DATE’MURI program(N00014-11-1-0721 program manager:Paul Maki) 

主　　题：AlN GaN heterostructure Near-UV light emission unipolar Zener tunneling 

摘      要：Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room *** different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy(MBE).All samples displayed a single electroluminescent spectral peak at 360 nm with full-width at half-maximum(FWHM)values no greater than 16 nm and an external quantum efficiency(EQE)of≈0.0074%at 18.8 *** contrast to traditional GaN light emitters,p-type doping and p-contacts are completely avoided,and instead,holes are created in the GaN on the emitter side of the tunneling structure by direct interband(that is,Zener)tunneling from the valence band to the conduction band on the collector *** Zener tunneling is enhanced by the high electric fields(~5×106 V cm^(−1))created by the notably large polarization-induced sheet charge at the interfaces between the AlN and GaN.