The Textured Growth Characteristics of Diamond Films on CoSi2 (001)

作     者：C.Z.Gu 

作者机构：Fraunhofer-Instiut f(u)r Schicht- und Oberfl(a)chentecbnik Bienroder Weg 54E 38108 Braunschweig Germany 

出 版 物：《材料科学与工程学报》 (Journal of Materials Science and Engineering)

年 卷 期：2000年第20卷第Z2期

页      面：653-656页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Diamond Films epitaxial growth plasma chamber diamond films in order 

摘      要：Epitaxial CoSi2 (001) layers, deposited on Si (001) substrate by molecular beam allotaxy (MBA), were used as substrate for diamond deposition in order to realise new applications. The results indicate that, in a microwave plasma chamber, diamond can be nucleated with a higher density on CoSi2 at lower temperatures using a bias enhanced method. High quality, [001]-textured diamond films can be synthesized on CoSi2 (001) using the [001] textured growth conditions. So far an epitaxial growth of diamond on CoSi2 cannot be observed. Statistically, a rotating angle distribution of diamond grains around the [001] axis in an [001]-textured film shows, however, preferred in-plane orientations of 13°, 22°, 45° and 77° relative to the CoSi2 [011]axis. The structural and chemical analyses show that no Co and Si element diffusion from the CoSi2 substrate into the diamond film can be detected.