The dielectric studies on sol–gel routed molybdenum oxide thin film
作者机构:Department of PhysicsSt.Joseph's CollegeTrichyIndia
出 版 物:《Journal of Advanced Dielectrics》 (先进电介质学报(英文))
年 卷 期:2017年第7卷第2期
页 面:21-27页
学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)]
主 题:Sol-gel dielectric constant capacitance tunability Curie-temperature figure-of-merit
摘 要:The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide(MoO_(3)) thin film has been *** films were annealed at temperatures 250℃,350℃ and 400℃.The phase transformation from amorphous to-orthorhombic phase with preferential orientation(022)has been found by XRD for the film annealed above 250℃.The vibration modes of-orthorhombic MoO_(3) have been examined by Raman *** predominant Raman s band of-orthorhombic MoO_(3) thin film has been found at the frequency range 1000–600 cm^(-1).Using the UV–Vis spectrum,the band gap of the film is found to be 3.3–3.8 *** surface morphology of the MoO_(3) films has been examined by scanning electron *** AC conductivity measurement of the MoO_(3) film has been carried out in the frequency range 10–10^(6) *** frequency dependence of the impedance has been plotted in the complex *** variation of the capacitance and dielectric constant of MoO_(3) film with respect to temperature and frequency has been *** of capacitance and figure of merit of the film are also determined.