Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias

作     者：Yong DING ,Xiao-hua LUO ,Xiao-lang YAN (Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China) 

作者机构：Institute of VLSI Design Zhejiang University Hangzhou China 

出 版 物：《Journal of Zhejiang University-Science C(Computers and Electronics)》 (浙江大学学报C辑（计算机与电子（英文版）)

年 卷 期：2011年第12卷第7期

页      面：597-603页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project (No.KYJD09012) supported by the Fundamental Research Funds for the Central Universities China 

主　　题：Low-frequency noises (LFN) Effective substrate resistivity Channel-substrate junction Sidegating bias 

摘      要：Low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias *** was found that the fluctuations of the channel current were directly dependent upon the sidegating *** the sidegating bias decreased,the amplitudes of the oscillations would increase ***,the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain *** mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.