Synthesis of GaN nanorods on Si substrates with assistance of the vola-tilization of ZnO middle layers

作     者：ZHUANGHuizhao GAOHaiyong XUEChengshan WANGShuyun DONGZhihua HEJianting ZHUANG Huizhao, GAO Haiyong, XUE Chengshan, WANG Shuyun, DONG Zhihua, and HE Jianting College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

作者机构：CollegeofPhysicsandElectronicsShandongNormalUniversityJinan250014China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2005年第24卷第2期

页      面：110-114页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was financially supported by the Key Research Program of National Natural Science Foundation of China (No. 90301002 and No. 90201025) 

主　　题：semiconductor materials GaN nanorods r.f. magnetron sputtering ZnO/Ga2O3 films 

摘      要：GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950 degrees C. Ga2O3 thin films and ZnO middle layers were deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. ZnO volatilized at 950 degrees C in the ammonia ambience and Ga2O3 reacted to NH3 to fabricate GaN nanorods in the later ammoniating process. The volatilization of ZnO layers played an important role in the fabrication. The structure and composition of the GaN nanorods were studied by X-ray diffraction (XRD) and Fourier transform infrared spectrophotometer (FTIR). The morphology of GaN nanorods was investigated using scanning electron microscopy (SEM) and transmission electronic microscope (TEM). The analyses of measured results revealed that GaN nanorods with hexagonal wurtzite structure were prepared by this method.