Optical second-harmonic generation measurement for probing organic device operation

作     者：Takaaki Manaka Mitsumasa Iwamoto 

作者机构：Department of Physical ElectronicsTokyo Institute of Technology2-12-1 O-okayamaMeguro-kuTokyo 152-8552Japan 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2015年第4卷第1期

页      面：99-108页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Financial support by the Grants-in-Aid for Scientific Research(no.22226007 21686029 24360118 and 15H03971)from the Japan Society for the Promotion of Science is greatly appreciated 

主　　题：electric field optical second-harmonic generation semiconductor device 

摘      要：We give a brief overview of the electric-field induced optical second-harmonic generation(EFISHG)technique that has been used to study the complex behaviors of organic-based *** analyzing EFISHG images of organic field-effect transistors,the in-plane two-dimensional distribution of the electric field in the channel can be *** susceptibility tensor of the organic semiconductor layer and the polarization of the incident light are considered to determine the electric field *** imaging can effectively evaluate the distribution of the vectorial electric field in organic films by selecting a light *** the time-resolved technique,measurement of the electric field originating from the injected carriers allows direct probing of the carrier motion under device operation,because the transient change of the electric field distribution reflects the carrier *** applications of the EFISHG technique to organic electronic devices are reviewed.