On increasing of integration rate of elements in a multi-level inverter

作     者：Evgeny L.Pankratov Volga-Vyatka Branch Elena Alexeevna Bulaeva 

作者机构：Mathematical DepartmentRadiophysical FacultyNizhny Novgorod State UniversityNizhny NovgorodRussia Moscow Technical University of Communication and Informatics(MTUSI)Nizhny NovgorodRussia 

出 版 物：《International Journal of Intelligent Computing and Cybernetics》 (智能计算与控制论国际期刊（英文）)

年 卷 期：2017年第10卷第3期

页      面：272-286页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work is supported by the agreement of August 27 2013 No.02.В.49.21.0003 between The Ministry of Education and Science of the Russian Federation and Lobachevsky State University of Nizhni Novgorod and educational fellowship for scientific research of Government of Nizhny Novgorod region of Russia 

主　　题：Function approximation Mathematical optimization 

摘      要：Purpose–The purpose of this paper is to analyze the redistribution of dopant and radiation defects to determine conditions which correspond to decreasing of elements in the considered inverter and at the same time to increase their ***/methodology/approach–In this paper,the authors introduce an approach to increase integration rate of elements in a three-level *** approach is based on decrease in the dimension of elements of the inverter(diodes and bipolar transistors)due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation ***–The authors formulate recommendations to increase density of elements of the inverter with a decrease in their *** implications–Optimization of manufacturing of integrated circuits and their ***/value–The results of this paper are based on original analysis of transport of dopant with account transport and interaction of radiation defects.