Simulations of thermal conductance across tilt grain boundaries in graphene
Simulations of thermal conductance across tilt grain boundaries in graphene作者机构:Institute of Applied Mechanics Zhejiang University
出 版 物:《Acta Mechanica Sinica》 (力学学报(英文版))
年 卷 期:2012年第28卷第6期
页 面:1528-1531页
核心收录:
基 金:supported by Science Foundation of Chinese University(2011QNA4038) Scientific Research Fund of Zhe-jiang Provincial Education Department(Z200906194) Science and Technology Innovative Research Team of Zhejiang Province(2009R50010)
主 题:Graphene Thermal conductivity Grain bound-ary
摘 要:Non-equilibrium molecular dynamics (MD) method was performed to simulate the thermal transporta- tion process in graphene nanoribbons (GNRs). A convenient way was conceived to introduce tilt grain boundaries (GBs) into the graphene lattice by repetitive removing C atom rows along certain directions. Comprehensive MD simulations reveal that larger-angle GBs are effective thermal barriers and substantially reduce the average thermal conductivity of GNRs. The GB thermal conductivity is ~ 10 W-m-1 .K-l for a bicrystal GNR with a misorientation of 21.8%, which is -97 % less than that of a prefect GNR with the same size. The total thermal resistance has a monotonic dependence on the den- sity of the 5-7 defects along the GBs. A theoretical model is proposed to capture this relation and resolve the contribu- tions by both the reduction in the phonon mean free path and the defect-induced thermal resistance.