Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO
Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO作者机构:(SchoolofMicroelectronicsandSolidStateElectronicsUniversityofElectronicScienceandTechnologyofChinaChengdu610054CHN
出 版 物:《Semiconductor Photonics and Technology》 (半导体光子学与技术(英文版))
年 卷 期:2005年第11卷第2期
页 面:85-88,106页
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:National Natural Science Foundation of China(60390073) National"973"Project of China(51310209-4)
主 题:ZnO Schottky barrier junction Characteristic Barrier height Surface state UV photodetector Spectral responsivity
摘 要:Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.