Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

作     者：GAOHui LIYan YANGLi-ping DENGHong 

作者机构：（SchoolofMicroelectronicsandSolidStateElectronicsUniversityofElectronicScienceandTechnologyofChinaChengdu610054CHN 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：2005年第11卷第2期

页      面：85-88,106页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：National Natural Science Foundation of China(60390073) National"973"Project of China(51310209-4) 

主　　题：ZnO Schottky barrier junction Characteristic Barrier height Surface state UV photodetector Spectral responsivity 

摘      要：Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.