THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS

作     者：S.B. Zhang, G.L. Kong, Y. Y. Xu, Y.Q. Wang, H.W. Diao and X.B. Liao (State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China) 

作者机构：Inst. of Semiconduct. Chinese Acad. of Sci. Beijing 100083 China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2001年第14卷第6期

页      面：453-456页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the"973"National Basic Research Program G2000028201 

主　　题：light-induced change transient film 

摘      要：The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The light-induced changes of the concentration and energy level of the traps were estimated. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm-Si:H than that for a-Si:H.