Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for Ti3_(S)iC_(2)

作     者：Jurgen Geiser Sven Blankenburg 

作者机构：Department of MathematicsHumboldt-Universitat zu BerlinD-10099 BerlinGermany Department of PhysicsHumboldt-Universitat zu BerlinD-10099 BerlinGermany. 

出 版 物：《Communications in Computational Physics》 (计算物理通讯（英文）)

年 卷 期：2012年第11卷第5期

页      面：1618-1642页

核心收录：

学科分类：07[理学] 0704[理学-天文学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学] 

基　　金：This work was funded by the Federal Ministry of Education and Research under contract number 03 SF 0325 A.We additionally thank Dipl.-Ing.Martin Balzer FEM Schwabisch Gmund Germany for his discussions and for inspiring this work 

主　　题：DC sputtering MAX-phases mean free path particle in cell Monte Carlo collisions Monte Carlo Markov chain 

摘      要：We simulate the particle transport in a thin film deposition process made by PVD(physical vapor deposition)and present several models for projectile and target collisions in order to compute the mean free path and the differential cross section(angular distribution of scattered projectiles)of the scattering process.A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC *** derive an equation for the mean free path for arbitrary interactions(cross sections)that includes the relative velocity between the *** apply our results to two major interaction models:hard sphere interaction&screened Coulomb *** types of interaction separate DC sputtering from HIPIMS.