In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity
作者机构：School of Physics and Engineeringand Key Laboratory of Material PhysicsZhengzhou UniversityZhengzhou 450052China Department of Applied Physics and Materials Research CenterThe Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2019年第12卷第1期
页 面：183-189页
核心收录：
基 金：the National Natural Science Foundation of China(Nos.61605174 and 61774136) the Key Projects of Higher Education in Henan Province(No.17A140012) Research Grants Council,University Grants Committee(RGC,UGC)(GRF 152109/16E PolyU B-Q52T)
主 题：PtSe2 heterojunction deep ultraviolet photodetectors self-powered
摘 要：The research of ultraviolet photodetectors(UV PDs)have been attracting extensive attention,due to their important applications in many *** this study,PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional(2D)PtSe2 film on n-GaN *** PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias *** analysis reveals that a high responsivity of 193 mA·W^-1,an ultrahigh specific detectivity of 3.8 × 10^14 Jones,linear dynamic range of 155d B and current on/off ratio of^10^8,as well as fast response speeds of 45/102μs were obtained at zero bias ***,this device response quickly to the pulse laser of 266 nm with a rise time of 172 *** high-performanee PtSe2/GaN heteroj u nction UV PD demonstrated in this work is far superior to previously reported results,suggesting that it has great potential for deep UV detection.
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